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MMRF2004NBr1 1 rf device data freescale semiconductor, inc. rf ldmos wideband integrated power amplifier the MMRF2004NB wideband integrated circuit is designed with on--chip matching that makes it usable from 2300 to 2700 mhz. this multi--stage structure is rated for 26 to 32 v operation and covers all typical cellular base station modulation formats. ? typical wimax performance: v dd =28vdc,i dq1 =77ma,i dq2 = 275 ma, p out = 4 w avg., f = 2700 mhz, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. power gain ? 28.5 db power added efficiency ? 17% device output signal par ? 9 db @ 0.01% probability on ccdf acpr @ 8.5 mhz offset ? --50 dbc in 1 mhz channel bandwidth driver applications ? typical wimax performance: v dd =28vdc,i dq1 =77ma,i dq2 = 275 ma, p out = 26 dbm avg., f = 2700 mhz, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. power gain ? 27.8 db power added efficiency ? 3.2% device output signal par ? 9 db @ 0.01% probability on ccdf acpr @ 8.5 mhz offset ? --56 dbc in 1 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 32 vdc, 2600 mhz, 40 w cw output power (3 db input overdrive from rated p out ) ? stable into a 5:1 vswr. all spurs below --60 dbc @ 100 mw to 5 w cw p out ? typical p out @ 1 db compression point ? 25 w cw features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? on--chip matching (50 ohm input, dc blocked) ? integrated quiescent current te mperature compensation with enable/disable function (1) ? integrated esd protection ? 225 ? c capable plastic package ? in tape and reel. r1 suffix = 500 units, 44 mm tape width, 13--inch reel. 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes -- an1977 or an1987. MMRF2004NBr1 2500--2700 mhz, 4 w avg., 28 v wimax rf ldmos wideband integrated power amplifier to--272wb--16 plastic document number: MMRF2004NB rev. 0, 12/2013 freescale semiconductor technical data figure 1. functional block diagram quiescent current temperature compensation (1) v ds1 rf in v gs1 rf out /v ds2 v gs2 v ds1 (top view) figure 2. pin connections note: exposed backside of the package is the source terminal for the transistors. gnd nc rf in v gs1 gnd rf out /v ds2 gnd 1 2 3 4 5 6 7 8 16 15 14 13 12 v gs2 9 10 gnd 11 v ds1 nc nc nc v ds1 nc nc ? freescale semiconductor, inc., 2013. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MMRF2004NBr1 table 1. maximum ratings rating symbol value unit drain--source voltage v ds --0.5, +65 vdc gate--source voltage v gs --0.5, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg -- 65 to +150 ? c case operating temperature t c 150 ? c operating junction temperature (1) t j 225 ? c input power p in 22 dbm table 2. thermal characteristics characteristic symbol value (2) unit thermal resistance, junction to case wimax application stage 1, 28 vdc, i dq1 =77ma (case temperature 75 ? c, p out = 4 w avg.) stage 2, 28 vdc, i dq2 = 275 ma cw application stage 1, 28 vdc, i dq1 =77ma (case temperature 81 ? c, p out = 25 w cw) stage 2, 28 vdc, i dq2 = 275 ma r ? jc 5.9 1.4 5.5 1.3 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1b machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) ii table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit stage 1 -- off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 ? adc stage 1 -- on characteristics gate threshold voltage (v ds =10vdc,i d =20 ? adc) v gs(th) 1.2 1.9 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq1 =77ma) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq1 = 77 madc, measured in functional test) v gg(q) 12.5 15.8 19.5 vdc 1. continuous use at maximum temperature will affect mttf. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. (continued)
MMRF2004NBr1 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 -- off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 ? adc stage 2 -- on characteristics gate threshold voltage (v ds =10vdc,i d =80 ? adc) v gs(th) 1.2 1.9 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq2 = 275 madc) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq2 = 275 madc, measured in functional test) v gg(q) 11 14 18 vdc drain--source on--voltage (v gs =10vdc,i d = 800 madc) v ds(on) 0.15 0.47 0.8 vdc stage 2 -- dynamic characteristics (1) output capacitance (v ds =28vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 111 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 =77ma,i dq2 = 275 ma, p out = 4 w avg., f = 2700 mhz, wimax, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. acpr measured in 1 mhz channel bandwidth @ ? 8.5 mhz offset. power gain g ps 25.5 28.5 30.5 db power added efficiency pae 15 17 ? % output peak--to--average ratio @ 0.01% probability on ccdf par ? 9 ? db adjacent channel power ratio acpr ? -- 5 0 -- 4 6 dbc input return loss irl ? -- 1 5 -- 1 0 db typical performances ofdm signal -- 10 mhz channel bandwidth (in freescale test fixture, 50 ohm system) v dd =28vdc, i dq1 =77ma,i dq2 = 275 ma, p out = 4 w avg., f = 2700 mhz, wimax, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. relative constellation error (2) rce ? -- 3 3 ? db error vector magnitude (2) evm ? 2.2 ? %rms 1. part internally matched both on input and output. (continued) 2. rce = 20log(evm/100)
4 rf device data freescale semiconductor, inc. MMRF2004NBr1 table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 =77ma,i dq2 = 275 ma, 2500--2700 mhz bandwidth p out @ 1 db compression point, cw p1db ? 25 ? w imd symmetry @ 27 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 50 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 90 ? mhz gain flatness in 200 mhz bandwidth @ p out =4wavg. g f ? 0.5 ? db average deviation from linear phase in 200 mhz bandwidth @p out =25wcw ? ? 2.1 ? ? average group delay @ p out = 25 w cw, f = 2600 mhz delay ? 2.3 ? ns part--to--part insertion phase variation @ p out =25wcw, f = 2600 mhz, six sigma window ?? ? 22 ? ? gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.036 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) ? p1db ? 0.003 ? dbm/ ? c typical driver performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 =77ma,i dq2 = 275 ma, p out =26dbmavg., f = 2700 mhz, wimax, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. acpr measured in 1 mhz channel bandwidth @ ? 8.5 mhz offset. power gain g ps ? 27.8 ? db power added efficiency pae ? 3.2 ? % output peak--to--average ratio @ 0.01% probability on ccdf par ? 9 ? db adjacent channel power ratio acpr ? -- 5 6 ? dbc input return loss irl ? -- 1 3 ? db relative constellation error @ p out =1.25wavg. (1) rce ? -- 4 0 ? db 1. rce = 20log(evm/100)
MMRF2004NBr1 5 rf device data freescale semiconductor, inc. figure 3. MMRF2004NBr1 test circuit schematic z9 0.040 ? x 0.061 ? microstrip z10 0.020 ? x 0.050 ? microstrip z11 0.050 ? x 0.050 ? microstrip z12 0.050 ? x 0.027 ? microstrip z13* 0.338 ? x 0.020 ? microstrip z14 1.551 ? x 0.027 ? microstrip pcb rogers r04350b, 0.0133 ? , ? r =3.48 * line length includes microstrip bends z1 0.500 ? x 0.027 ? microstrip z2 0.075 ? x 0.127 ? microstrip z3 1.640 ? x 0.027 ? microstrip z4 0.100 ? x 0.042 ? microstrip z5 0.151 ? x 0.268 ? microstrip z6 0.025 ? x 0.268 ? x 0.056 ? taper z7 0.050 ? x 0.056 ? microstrip z8 0.356 ? x 0.056 ? microstrip z2 rf input v g1 z5 rf output c11 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 nc nc nc dut z3 v dd1 quiescent current temperature compensation z1 nc z7 z11 c10 nc nc z8 z10 z9 c7 c8 c9 c17 z4 c6 c5 c4 r4 r5 r6 c3 c2 c1 r1 r2 r3 v g2 nc nc nc nc z6 v d2 c13 c14 c15 c16 28 v b1 z13 z12 z14 c12 table 6. MMRF2004NBr1 test circuit com ponent designations and values part description part number manufacturer b1 47 ? , 100 mhz short ferrite bead 2743019447 fair--rite c1, c4, c7, c12, c15 6.8 pf chip capacitors atc600s6r8ct250xt atc c2, c5, c8, c13 10 nf chip capacitors c0603c103j5rac kemet c3, c6, c9, c14 1 ? f, 50 v chip capacitors grm32rr71h105ka01b murata c10 2.4 pf chip capacitor atc600s2r4bt250xt atc c11 3.3 pf chip capacitor atc600s3r3bt250xt atc c16, c17 10 ? f, 50 v chip capacitors grm55dr61h106ka88b murata r1, r4 12 k ? , 1/4 w chip resistors crcw12061202fkea vishay r2, r3, r5, r6 1k ? , 1/4 w chip resistors crcw12061001fkea vishay
6 rf device data freescale semiconductor, inc. MMRF2004NBr1 figure 4. MMRF2004NBr1 test circuit component layout c17 c9 c8 c7 c4 c5 c1 c2 r4 r5 r6 r1 r2 r3 v g1 v g2 c6 c3 c10 c11 c12 c16 b1 c13 c14 c15 cut out area
MMRF2004NBr1 7 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) 2500 irl g ps acpr f, frequency (mhz) figure 5. wimax broadband performance @ p out = 4 watts avg. -- 2 4 -- 1 6 -- 1 8 -- 2 0 -- 2 2 26.6 28.6 28.4 28.2 -- 5 8 18 17 16 15 -- 5 3 -- 5 4 -- 5 5 -- 5 6 pae, power added efficiency (%) g ps , power gain (db) 28 27.8 27.4 27.2 27 26.8 2525 2550 2575 2600 2625 2650 2675 2700 14 -- 5 7 -- 2 6 parc parc (db) -- 1 -- 0 . 2 -- 0 . 4 -- 0 . 6 -- 0 . 8 -- 1 . 2 acpr (dbc) 27.6 -- 1 -- 0 . 2 -- 0 . 4 -- 0 . 6 -- 0 . 8 -- 1 . 2 irl g ps acpr f, frequency (mhz) figure 6. wimax broadband performance @ p out =26dbmavg. 26.6 28.6 28.4 28.2 -- 6 1 3.5 3 2.5 2 -- 5 6 -- 5 7 -- 5 8 -- 5 9 g ps , power gain (db) 28 27.8 27.6 27.4 27.2 27 26.8 1.5 -- 6 0 irl, input return loss (db) -- 3 0 -- 1 0 -- 1 5 -- 2 0 -- 2 5 -- 3 5 2500 2525 2550 2575 2600 2625 2650 2675 2700 parc acpr (dbc) parc (db) figure 7. power gain versus output power @i dq1 =77 ma 100 23 30 1 i dq2 = 412 ma 344 ma p out , output power (watts) cw v dd =28vdc i dq1 =77ma f = 2600 mhz 137 ma 275 ma 28 27 26 10 g ps , power gain (db) 29 206 ma 25 24 0.1 figure 8. power gain versus output power @i dq2 = 275 ma 100 23 30 1 i dq1 = 103 ma 96 ma p out , output power (watts) cw v dd =28vdc i dq2 = 275 ma f = 2600 mhz 28 27 26 10 g ps , power gain (db) 29 25 24 0.1 77 ma 58 ma 39 ma v dd =28vdc,p out =4w(avg.),i dq1 =77ma,i dq2 = 275 ma ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probab ility on ccdf v dd =28vdc,p out =26dbm(avg.),i dq1 =77ma,i dq2 = 275 ma ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth input signal par = 9.5 d b @ 0.01% pr obabilit y on ccdf pae pae, power added efficiency (%) pae
8 rf device data freescale semiconductor, inc. MMRF2004NBr1 typical characteristics figure 9. intermodulation distortion products versus tone spacing two--tone spacing (mhz) 10 -- 6 0 0 im3--u -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--l im5--u im5--l im7--l im7--u v dd =28vdc,p out = 27 w (pep), i dq1 =77ma i dq2 = 275 ma, two--tone measurements (f1 + f2)/2 = center frequency of 2600 mhz figure 10. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 5 9 0 -- 2 output compression at 0.01% probability on ccdf (db) 1 12 15 5 35 30 25 20 15 10 pae, power added eficiency (%) --2 db = 6.21 w acpr parc acpr (dbc) -- 6 0 -- 3 0 -- 3 5 -- 4 0 -- 5 0 -- 4 5 -- 5 5 29 g ps , power gain (db) 28.5 28 27.5 27 26 g ps 50 0 45 -- 6 0 -- 1 5 p out , output power (watts) avg. wimax t c =--40 _ c 85 _ c 10 1 40 35 30 25 20 -- 2 0 -- 2 5 -- 3 0 -- 3 5 -- 4 0 acpr (dbc) g ps pae, power added efficiency (%), g ps , power gain (db) -- 4 0 _ c 25 _ c acpr 15 10 -- 4 5 -- 5 0 figure 11. wimax, acpr, power gain and power added efficiency versus output power 26.5 -- 3 -- 4 6 3 --1 db = 4.01 w --3 db = 8.59 w -- 1 0 5 -- 5 5 25 _ c 85 _ c -- 4 0 _ c 25 _ c 85 _ c v dd =28vdc,i dq1 =77ma,i dq2 = 275 ma f = 2600 mhz, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf v dd =28vdc,i dq1 =77ma,i dq2 = 275 ma f = 2600 mhz, ofdm 802.16d, 64 qam 3 / 4 ,4bursts 10 mhz channel bandwidth, input signal par = 9.5 db @ 0. 01% probab ility on ccdf pae pae
MMRF2004NBr1 9 rf device data freescale semiconductor, inc. typical characteristics 3400 -- 5 25 1800 -- 5 0 0 s21 f, frequency (mhz) figure 12. broadband frequency response s11 -- 1 0 19 -- 2 0 13 -- 3 0 7 -- 4 0 1 2800 2600 2400 2200 2000 s11 (db) s21 (db) v dd =28vdc i dq1 =77ma,i dq2 = 275 ma 3000 3200
10 rf device data freescale semiconductor, inc. MMRF2004NBr1 wimax test signal 10 0.0001 100 0 peak--to--average (db) figure 13. ofdm 802.16d test signal 10 1 0.1 0.01 0.001 24 68 probability (%) input signal ofdm 802.16d, 64 qam 3 / 4 ,4bursts 10 mhz channel bandwidth, input signal par = 9.5 db @ 0. 01% probab ility on ccdf -- 6 0 -- 1 0 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 10 mhz channel bw 20 515 10 0 -- 5 -- 1 0 -- 2 0 f, frequency (mhz) figure 14. wimax spectrum mask specifications -- 1 5 acpr in 1 mhz integrated bw acpr in 1 mhz integrated bw
MMRF2004NBr1 11 rf device data freescale semiconductor, inc. z o =50 ? z load f = 2700 mhz f = 2500 mhz z source f = 2500 mhz f = 2700 mhz v dd =28vdc,i dq1 =77ma,i dq2 = 275 ma, p out =4wavg. f mhz z source ? z load ? 2500 36.381 -- j4.271 5.717 -- j3.618 2525 36.041 -- j3.328 5.624 -- j3.187 2550 35.753 -- j2.363 5.578 -- j2.770 2575 35.516 -- j1.380 5.589 -- j2.412 2600 35.333 -- j0.381 5.586 -- j2.088 2625 35.203 + j0.635 5.579 -- j1.807 2650 35.126 + j1.664 5.552 -- j1.559 2675 35.104 + j2.707 5.564 -- j1.335 2700 35.138 + j3.760 5.568 -- j1.164 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 15. series equivalent source and load impedance z source z load input matching network device under test output matching network
12 rf device data freescale semiconductor, inc. MMRF2004NBr1 table 7. common source s--parameters (v dd =28v,i dq1 =77ma,i dq2 = 275 ma, t a =25 ? c, 50 ohm system) f mhz s 11 s 21 s 12 s 22 |s 11 | ?? |s 21 | ?? |s 12 | ?? |s 22 | ?? 1500 0.735 61.0 0.001 --167.6 0.000501 26.6 0.992 167.9 1550 0.729 53.3 0.004 --146.0 0.000361 34.7 0.993 166.3 1600 0.715 46.5 0.014 --146.4 0.000114 109.5 0.991 164.6 1650 0.695 39.8 0.039 --152.5 0.000385 148.4 0.992 162.7 1700 0.665 32.9 0.110 --166.8 0.000773 155.6 0.989 160.5 1750 0.619 25.0 0.299 169.4 0.00134 153.2 0.979 157.8 1800 0.549 15.1 0.708 134.4 0.00198 143.0 0.944 155.2 1850 0.452 2.6 1.335 96.3 0.00250 131.2 0.903 153.9 1900 0.332 --14.4 2.195 62.1 0.00290 121.7 0.879 153.0 1950 0.199 --40.1 3.445 32.7 0.00320 113.8 0.847 151.0 2000 0.089 --91.9 5.724 4.8 0.00345 108.5 0.817 147.7 2050 0.078 167.4 10.041 --26.2 0.00382 107.0 0.749 140.6 2100 0.116 90.3 19.072 --65.1 0.00525 105.3 0.571 125.2 2150 0.170 --13.2 32.642 --126.0 0.00781 77.9 0.054 160.2 2200 0.192 --93.2 31.339 171.3 0.00640 41.0 0.555 --144.4 2250 0.177 --123.0 26.174 130.3 0.00432 24.9 0.726 --160.3 2300 0.163 --132.6 23.605 98.7 0.00294 22.3 0.770 --167.1 2350 0.153 --140.5 22.427 70.0 0.00224 31.0 0.789 --170.1 2400 0.119 --153.6 21.922 41.7 0.00208 42.5 0.800 --171.0 2450 0.059 --165.3 21.172 14.2 0.00216 48.9 0.820 --171.2 2500 0.014 --50.7 20.172 --12.5 0.00227 48.9 0.850 --171.3 2550 0.055 --55.0 19.222 --39.5 0.00213 51.4 0.889 --171.7 2600 0.056 --84.7 17.366 --66.8 0.00209 57.8 0.933 --173.2 2650 0.029 177.4 14.562 --91.5 0.00247 65.6 0.961 --175.8 2700 0.069 103.3 12.199 -- 1 1 1 . 7 0.00286 62.2 0.968 --178.0 2750 0.122 84.1 10.485 --130.4 0.00308 56.3 0.969 --179.5 2800 0.287 59.8 8.086 --154.4 0.00326 50.9 0.969 179.3 2850 0.184 -- 5 . 4 7.102 --152.5 0.00292 39.2 0.966 178.6 2900 0.129 --17.4 6.753 --169.3 0.00256 38.6 0.969 178.0 2950 0.128 --41.0 6.107 175.4 0.00232 38.5 0.970 177.4 3000 0.164 --65.7 5.445 160.8 0.00213 39.9 0.972 176.9 3050 0.223 --86.2 4.867 146.7 0.00196 42.0 0.972 176.4 3100 0.297 --100.4 4.363 133.2 0.00183 46.0 0.973 176.0 3150 0.374 --110.4 3.918 120.0 0.00176 51.4 0.974 175.5 3200 0.447 --118.0 3.534 107.2 0.00181 56.5 0.974 174.9 3250 0.515 --123.4 3.198 95.3 0.00191 60.9 0.975 174.3 3300 0.563 --128.0 2.951 83.3 0.00211 58.8 0.975 173.7 3350 0.619 --131.8 2.761 71.2 0.00206 63.0 0.976 173.0 3400 0.651 --136.0 2.581 58.8 0.00218 64.8 0.975 172.3 3450 0.671 --140.1 2.418 46.0 0.00237 68.3 0.975 171.6 (continued)
MMRF2004NBr1 13 rf device data freescale semiconductor, inc. table 7. common source s--parameters (v dd =28v,i dq1 =77ma,i dq2 = 275 ma, t a =25 ? c, 50 ohm system) (continued) f mhz s 11 s 21 s 12 s 22 |s 11 | ?? |s 21 | ?? |s 12 | ?? |s 22 | ?? 3500 0.679 --144.4 2.257 32.6 0.00265 68.5 0.974 171.0 3550 0.677 --147.9 2.054 19.2 0.00280 65.0 0.976 170.5 3600 0.661 --153.5 1.851 5.0 0.00281 67.1 0.976 170.0 3650 0.696 --153.8 1.644 -- 5 . 8 0.00328 69.3 0.976 169.6 3700 0.721 --161.3 1.453 --19.4 0.00350 65.8 0.977 169.4 3750 0.737 --168.1 1.243 --32.1 0.00357 64.5 0.978 169.2 3800 0.753 --174.7 1.042 --43.7 0.00374 64.5 0.979 169.2 3850 0.771 179.2 0.859 --54.3 0.00401 62.5 0.980 169.2 3900 0.788 174.4 0.708 --62.8 0.00407 58.4 0.980 169.3 3950 0.812 169.8 0.583 --71.5 0.00416 57.7 0.981 169.3 4000 0.829 166.0 0.477 --79.0 0.00427 55.8 0.982 169.3
14 rf device data freescale semiconductor, inc. MMRF2004NBr1 alternative peak tune load pull characteristics 19 50 6 p in , input power (dbm) v dd =28vdc,i dq1 =77ma,i dq2 = 275 ma pulsed cw, 10 ? sec(on), 10% duty cycle, f = 2500 mhz 42 40 38 36 34 79 811 10 14 12 actual ideal p1db = 44.61 dbm (29 w) 13 15 16 5 p out , output power (dbm) p3db = 45.73 dbm (36 w) note: load pull test fixture tuned for peak p1db output power @ 28 v 4 3 48 44 46 17 18 test impedances per compression level z source ? z load ? p1db 42.7 + j11.6 4.86 -- j1.63 figure 16. pulsed cw output power versus input power @ 28 v @ 2500 mhz 20 50 6 p in , input power (dbm) v dd =28vdc,i dq1 =77ma,i dq2 = 275 ma pulsed cw, 10 ? sec(on), 10% duty cycle, f = 2700 mhz 42 40 38 36 32 79 811 10 14 12 actual ideal p1db = 45.42 dbm (28 w) 13 15 16 5 p out , output power (dbm) p3db = 44.46 dbm (35 w) note: load pull test fixture tuned for peak p1db output power @ 28 v 4 2 48 44 46 17 18 34 319 test impedances per compression level z source ? z load ? p1db 39.5 -- j8.7 3.53 -- j1.66 figure 17. pulsed cw output power versus input power @ 28 v @ 2700 mhz
MMRF2004NBr1 15 rf device data freescale semiconductor, inc. package dimensions
16 rf device data freescale semiconductor, inc. MMRF2004NBr1
MMRF2004NBr1 17 rf device data freescale semiconductor, inc.
18 rf device data freescale semiconductor, inc. MMRF2004NBr1 product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 dec. 2013 ? initial release of data sheet
MMRF2004NBr1 19 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. all other product or service names are the property of their respective owners. e 2013 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: MMRF2004NB rev. 0, 12/2013

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